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ZXMN20B28K
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
200
?
?
?
?
?
?
500
± 100
V
nA
nA
I D = 250 μ A, V GS = 0V
V DS = 200V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1
?
?
?
?
?
1.6
0.650
0.670
6.13
0.860
177
1.4
2.5
0.750
0.780
?
0.950
?
?
V
?
S
V
ns
μ C
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 2.75A
V GS = 5V, I D = 2.75A
V DS = 30V, I D = 2.75A
I S = 5.5A, V GS = 0V
I S = 6.5A, V GS = 0V,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
358
50
6.1
8.1
1.4
3.9
17.8
76.9
44.7
57.1
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V
f = 1MHz
V DS = 120V, V GS = 5V
I D = 6.5A
V DD = 100V, V GS = 5V
I D = 6.5A, R G ? 25 Ω
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
4 of 8
www.diodes.com
October 2009
? Diodes Incorporated
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